2N1131
- Manufacturer Central Semiconductor
- Part Number 2N1131
- Description Bipolar Transistors - BJT 50Vcbo 50Vcer 35Vceo 0.6A Ic 2.0W PNP
- Category Bipolar Transistors - BJT
Specifications
| Package | TO-39-3 |
| Packaging | Bulk |
| Min. Pack | 1 |
| Transistor Polarity | PNP |
| Emitter- Base Voltage VEBO | 5 V |
| Part # Aliases | 2N1131 PBFREE |
| Product Category | Bipolar Transistors - BJT |
| Brand | Central Semiconductor |
| Unit Weight | 0.035486 oz |
| Collector- Emitter Voltage VCEO Max | 35 V |
| Product Type | BJTs - Bipolar Transistors |
| Maximum Operating Temperature | + 200 C |
| Gain Bandwidth Product fT | 50 MHz |
| Maximum DC Collector Current | 0.6 A |
| RoHS | Y |
| Continuous Collector Current | 0.6 A |
| Collector-Emitter Saturation Voltage | 1.5 V |
| Configuration | Single |
| Subcategory | Transistors |
| Mounting Style | Through Hole |
| Collector- Base Voltage VCBO | 50 V |
| Minimum Operating Temperature | - 65 C |
| Pd - Power Dissipation | 600 mW |
| Technology | Si |
| DC Collector/Base Gain hfe Min | 15 at 5 mA, 10 V |
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