2DB1132P-13
- Manufacturer Diodes Incorporated
- Part Number 2DB1132P-13
- Description Bipolar Transistors - BJT 1000W -32Vceo
- Category Bipolar Transistors - BJT
Specifications
| Package | SOT-89-3 |
| Min. Pack | 1 |
| Transistor Polarity | PNP |
| Emitter- Base Voltage VEBO | 5 V |
| Width | 2.48 mm |
| Mounting Style | SMD/SMT |
| Product Category | Bipolar Transistors - BJT |
| Brand | Diodes Incorporated |
| Unit Weight | 0.001834 oz |
| Collector- Emitter Voltage VCEO Max | 32 V |
| Configuration | Single |
| Maximum Operating Temperature | + 150 C |
| Length | 4.5 mm |
| Maximum DC Collector Current | 1 A |
| RoHS | Y |
| Gain Bandwidth Product fT | 190 MHz |
| Product Type | BJTs - Bipolar Transistors |
| Subcategory | Transistors |
| Series | 2DB11 |
| Height | 1.5 mm |
| Packaging | |
| Collector- Base Voltage VCBO | 40 V |
| Minimum Operating Temperature | - 55 C |
| Pd - Power Dissipation | 1000 mW |
| DC Collector/Base Gain hfe Min | 82 |
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