2DA1213YQ-13
- Manufacturer Diodes Incorporated
- Part Number 2DA1213YQ-13
- Description Bipolar Transistors - BJT Pwr Mid Perf Transistor SOT89 T&R 2.5K
- Category Bipolar Transistors - BJT
Specifications
| Package | SOT-89-3 |
| Min. Pack | 1 |
| Transistor Polarity | PNP |
| Emitter- Base Voltage VEBO | - 6 V |
| Packaging | |
| Product Category | Bipolar Transistors - BJT |
| Brand | Diodes Incorporated |
| DC Current Gain hFE Max | 240 at - 500 mA, - 2 V |
| Collector- Emitter Voltage VCEO Max | - 50 V |
| Configuration | Single |
| Maximum Operating Temperature | + 150 C |
| Gain Bandwidth Product fT | 160 MHz |
| Maximum DC Collector Current | - 2.5 A |
| RoHS | Y |
| Continuous Collector Current | - 2 A |
| Collector-Emitter Saturation Voltage | - 0.5 V |
| Product Type | BJTs - Bipolar Transistors |
| Subcategory | Transistors |
| Mounting Style | SMD/SMT |
| Collector- Base Voltage VCBO | - 50 V |
| Minimum Operating Temperature | - 55 C |
| Pd - Power Dissipation | 1 W |
| Technology | Si |
| DC Collector/Base Gain hfe Min | 120 at - 500 mA, - 2 V |
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