150-101N09A-00
- Manufacturer IXYS
- Part Number 150-101N09A-00
- Description RF MOSFET Transistors DE-150 100V 9A N Channel MOSFET Transistor
- Category RF MOSFET Transistors
Specifications
| Package | SMD-6 |
| Packaging | Tube |
| Min. Pack | 1 |
| Vds - Drain-Source Breakdown Voltage | 100 V |
| Transistor Polarity | N-Channel |
| Vgs - Gate-Source Voltage | 20 V |
| Vgs th - Gate-Source Threshold Voltage | 2 V |
| Qg - Gate Charge | 22 nC |
| Type | RF Power MOSFET |
| Mounting Style | SMD/SMT |
| Product Category | RF MOSFET Transistors |
| Brand | IXYS |
| Number of Channels | 1 Channel |
| Product Type | RF MOSFET Transistors |
| Maximum Operating Temperature | + 175 C |
| Forward Transconductance - Min | 2.5 S |
| Id - Continuous Drain Current | 9 A |
| Output Power | 200 W |
| Rds On - Drain-Source Resistance | 160 mOhms |
| Operating Frequency | 100 MHz |
| RoHS | Y |
| Subcategory | MOSFETs |
| Series | DE |
| Minimum Operating Temperature | - 55 C |
| Technology | Si |
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